1/10 september 2002 std5nm50 std5nm50-1 n-channel 500v - 0.7 w - 7.5a dpak/ipak mdmesh?power mosfet (1) i sd 5a, di/dt 400a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.7 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. applications the mdmesh? family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d std5nm50 std5nm50-1 500v 500v <0.8 w <0.8 w 7.5 a 7.5 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (r gs = 20 k w ) 500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 7.5 a i d drain current (continuous) at t c = 100c 4.7 a i dm ( l ) drain current (pulsed) 30 a p tot total dissipation at t c = 25c 100 w derating factor 0.8 w/c dv/dt (1) peak diode recovery voltage slope 15 v/ns t stg storage temperature C 55 to 150 c t j max. operating junction temperature 1 3 dpak to-252 3 2 1 ipak to-251 (add suffix -1) internal schematic diagram
std5nm50/std5nm50-1 2/10 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . rthj-case thermal resistance junction-case max 1.25 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 300 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 2.5a 0.7 0.8 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 25v x, i d = 2.5a 3.5 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 415 pf c oss output capacitance 88 pf c rss reverse transfer capacitance 12 pf c oss eq. (2) equivalent output capacitance v gs = 0v, v ds = 0v to 400v 50 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 3 w
3/10 std5nm50/std5nm50-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250v, i d = 2.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 16 ns t r rise time 8 ns q g total gate charge v dd = 400v, i d = 7.5a v gs = 10v 13 nc q gs gate-source charge 5 nc q gd gate-drain charge 6 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 5a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 14 ns t f fall time 6 ns t c cross-over time 13 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 7.5 a i sdm (2) source-drain current (pulsed) 30 a v sd (1) forward on voltage i sd = 7.5a, v gs = 0 1.5 v t rr reverse recovery time i sd = 5a, di/dt = 100a/s, v dd = 100v, t j = 25c (see test circuit, figure 5) 185 ns q rr reverse recovery charge 1.1 c i rrm reverse recovery current 11.5 a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 270 1.6 12 ns c a thermal impedance safe operating area
std5nm50/std5nm50-1 4/10 gate charge vs gate-source voltage static drain-source on resistance transfer characteristics transconductance output characteristics capacitance variations
5/10 std5nm50/std5nm50-1 normalized on resistance vs temperature normalized bvdss vs temperature normalized gate threshold voltage vs temperature source-drain diode forward characteristics
std5nm50/std5nm50-1 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/10 std5nm50/std5nm50-1 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
std5nm50/std5nm50-1 8/10 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
std5nm50/std5nm50-1 9/10 tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
std5nm50/std5nm50-1 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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